mosfets to provide excellent r symbol max p-channel units v ds v v gs v i dm i ar e ar mj t j , t stg c symbol device typ max units n-ch 48 62.5 c/w n-ch 74 110 c/w r q jl n-ch 35 50 c/w p-ch 48 62.5 c/w p-ch 74 110 c/w r q jl p-ch 35 50 c/w 20 a 14 -20 9.8 power dissipation continuous drain current a i d p d avalanche current b repetitive avalanche energy l=0.1mh b t a =25c t a =70c pulsed drain current b -55 to 150 maximum junction-to-lead c steady-state parameter maximum junction-to-ambient a t 10s r q ja maximum junction-to-ambient a 40 -40 20 drain-source voltage 20 gate-source voltage absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel w 6 5 30 2 1.28 -4 -5 2 1.28 r q ja maximum junction-to-ambient a steady-state -30 t a =70c t a =25c steady-state junction and storage temperature range thermal characteristics: n-channel and p-channel -55 to 150 maximum junction-to-lead c steady-state maximum junction-to-ambient a t 10s AO4614B n-channel p-channel v ds (v) = 40v, -40v i d = 6a (v gs =10v) -5a (vgs=-10v) r ds(on) < 30m w (v gs =10v) < 45m w (vgs= -10v) < 38m w (v gs =4.5v) < 63m w (vgs= -4.5v) the AO4614B uses advanced trench technology ds(on) and low gate charge. the complementary mosfets may be used in h-bridge, inverters and other applications. g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view g1 d1 s1 g2 d2 s2 n-channel p-channel soic-8 www.freescale.net.cn 1/7 40v dual p + n-channel mosfet general description features
symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1.7 2.5 3 v i d(on) 30 a 24 30 t j =125c 36 45 30 38 g fs 19 s v sd 0.76 1 v i s 2 a c iss 410 516 650 pf c oss 82 pf c rss 43 pf r g 4.6 w q g (10v) 8.9 10.8 nc q g (4.5v) 4.3 5.6 nc q gs 2.4 nc q gd 1.4 nc t d(on) 6.4 ns t r 3.6 ns t d(off) 16.2 ns t f 6.6 ns t rr 18 24 ns q rr 10 nc 9 12 this product has been designed and qualified for th e consumer market. applications or uses as critical output capacitance input capacitance v gs =0v, v ds =0v, f=1mhz switching parameters reverse transfer capacitance gate resistance i s =1a,v gs =0v v gs =10v, i d =6a diode forward voltage v gs =10v, v ds =20v, r l =3.3 w , r gen =3 w gate source charge gate drain charge turn-on delaytime turn-on rise time total gate charge v gs =10v, v ds =20v, i d =6a r ds(on) static drain-source on-resistance forward transconductance v gs =4.5v, i d =5a v ds =5v, i d =6a m w gate threshold voltage v ds =v gs i d =250 m a on state drain current v gs =10v, v ds =5v m a gate-body leakage current v ds =0v, v gs = 20v n channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current v ds =40v, v gs =0v maximum body-diode continuous current dynamic parameters body diode reverse recovery charge i f =6a, di/dt=100a/ m s turn-off delaytime turn-off fall time body diode reverse recovery time i f =6a, di/dt=100a/ m s total gate charge v gs =0v, v ds =20v, f=1mhz a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user 's specific board design. the current rating is bas ed on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. rev2 : nov. 2010 www.freescale.net.cn 2/7 AO4614B 40v dual p + n-channel mosfet
typical electrical and thermal characteristics: n-c hannel 9 12 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3.5v 4v 10v 5v 4.5v 0 5 10 15 20 25 30 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 20 22 24 26 28 30 32 34 36 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =6a v gs =4.5v i d =5a 10 20 30 40 50 60 70 80 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =6a 25c 125c www.freescale.net.cn 3/7 AO4614B 40v dual p + n-channel mosfet
typical electrical and thermal characteristics: n-c hannel 9 12 0 2 4 6 8 10 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 0 10 20 30 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =20v i d = 6a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =74c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s www.freescale.net.cn 4/7 AO4614B 40v dual p + n-channel mosfet
symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -2 -3 v i d(on) -30 a 36 45 t j =125c 52 65 50 63 g fs 13 s v sd -0.76 -1 v i s -2 a c iss 750 940 1175 pf c oss 97 pf c rss 72 pf r g 14 w q g (-10v) 17 22 nc q g (-4.5v) 7.9 10 nc q gs 3.4 nc q gd 3.2 nc t d(on) 6.2 ns t r 8.4 ns t d(off) 44.8 ns t f 41.2 ns t rr 21 27 ns q rr 14 nc 9 12 p-channel electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d = -250 m a, v gs =0v i dss zero gate voltage drain current v ds = -40v, v gs =0v m a gate-body leakage current v ds =0v, v gs = 20v gate threshold voltage v ds =v gs i d = -250 m a on state drain current v gs = -10v, v ds = -5v m w v ds = -5v, i d = -5a r ds(on) static drain-source on-resistance forward transconductance v gs = -10v, i d = -5a v gs = -4.5v, i d = -4a diode forward voltage i s = -1a,v gs =0v maximum body-diode continuous current reverse transfer capacitance dynamic parameters input capacitance v gs =0v, v ds = -20v, f=1mhz gate resistance output capacitance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs = -10v, v ds = -20v, i d = -5a v gs = -10v, v ds = -20v, r l =4 w , r gen =3 w turn-on rise time turn-off delaytime turn-off fall time gate source charge gate drain charge turn-on delaytime total gate charge body diode reverse recovery time i f = -5a, di/dt=100a/ m s body diode reverse recovery charge i f = -5a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating i s based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. the current ra ting is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12, 14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating . rev1 : jan 2010 www.freescale.net.cn 5/7 AO4614B 40v dual p + n-channel mosfet
typical electrical and thermal characteristics: p-c hannel 9 12 0 5 10 15 20 25 30 0 1 2 3 4 5 -v ds (volts) fig 12: on-region characteristics -i d (a) v gs =-3.5v -4v -10v -5v -4.5v 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 4.5 -v gs (volts) figure 13: transfer characteristics -i d (a) 30 35 40 45 50 55 60 65 0 5 10 15 20 -i d (a) figure 14: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 17: body-diode characteristics -i s (a) 25c 125c 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 temperature (c) figure 15: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-5a v gs =-4.5v i d =-4a 30 50 70 90 110 130 3 4 5 6 7 8 9 10 -v gs (volts) figure 16: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5a 25c 125c www.freescale.net.cn 6/7 AO4614B 40v dual p + n-channel mosfet
typical electrical and thermal characteristics: p-c hannel 9 12 0 2 4 6 8 10 0 3 6 9 12 15 18 q g (nc) figure 18: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 10 20 30 40 -v ds (volts) figure 19: capacitance characteristics capacitance (pf) c iss 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 21: single pulse power rating junction- to-ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 22: normalized maximum transient thermal imp edance z q q q q ja normalized transient thermal resistance c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (volts) -i d (amps) figure 20: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc t j(max) =150c t a =25c r ds(on) limited v ds =-20v i d = -5a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =74c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s www.freescale.net.cn 7/7 AO4614B 40v dual p + n-channel mosfet
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